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Advanced internal structure of new power-transistor family delivers best on-state resistance for low-energy, space-efficient designs
May 23, 2013
By: DAVID SAVASTANO
STMicroelectronics has introduced its latest generation of energy-efficient power devices that reduce the environmental impact of equipment such as telecom or computing systems, solar inverters, industrial automation and automotive applications. ST’s new STripFET VII DeepGATE MOSFETs deliver the best conducting efficiency among currently available 80V and 100V devices, while switching efficiency is also increased. In addition, the devices help to simplify designs and reduce equipment size and cost by allowing system power and efficiency targets to be met using fewer devices in small package sizes. The critical advance in ST’s STripFET VII DeepGATE technology is an enhanced MOSFET gate structure, which lowers device on-state resistance while also reducing internal capacitances and gate charge for faster, more efficient switching. The devices also have high avalanche ruggedness to survive potentially damaging hard conditions, which makes them a strong choice for automotive applications.
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